D1010UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D1010UK Datasheet PDF : 5 Pages
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TetraFET
D1010UK
MECHANICAL DATA
C
(2 pls)
1
HD
B
2
3
5
4
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C
45°
5°
D
9.78
0.13
E
5.71
0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I
22.22 MAX
J
0.13
0.02
K
2.72
0.13
M
1.70
0.13
N
5.08
0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 01/01
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