D1010UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc

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D1010UK

METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

D1010UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

BVDSS

Drain–Source Breakdown

Voltage

PER SIDE

VGS = 0

ID = 100mA

70

IDSS

Zero Gate Voltage

Drain Current

VDS = 28V

VGS = 0

IGSS

VGS(th)

gfs

GPS

h

VSWR

Gate Leakage Current

Gate Threshold Voltage*

Forward Transconductance*

TOTAL D

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

PO = 125W

VDS = 28V

f = 400MHz

VDS = 0

VDS = VGS

ID = 5A

IDQ = 2A

1

3.2

10

50

20:1

Ciss

Coss

Crss

Input Capacitance

VDS = 0

Output Capacitance

VDS = 28V

Reverse Transfer Capacitance VDS = 28V

PER SIDE

VGS = –5V

VGS = 0

VGS = 0

f = 1MHz

f = 1MHz

f = 1MHz

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%

Typ.

Max. Unit

V

4

mA

1

mA

7

V

S

dB

%

—

240 pF

120 pF

10

pF

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Max. 0.5°C / W

Prelim. 01/01

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