D2089UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D2089UK Datasheet PDF : 2 Pages
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MECHANICAL DATA
H
4
B
3
2
PIN 1
PIN 3
C
(2 pls)
A
SOURCE
SOURCE
1
G
(2 pls)
D
F
E
PIN 2
PIN 4
GATE
DRAIN
DIM Millimetres
A
25.40
B
45°
C
0.76
D
5.21 DIA
E
1.02
F
0.13
G
3.18
H
3.18
Tol.
0.25
5°
0.05
0.13
0.13
0.02
0.13
REF
Inches
1.00
45°
0.030
0.205
0.040
0.005
0.125
0.125
Tol.
0.010
5°
0.002
0.005
0.005
0.001
0.005
REF
TetraFET
D2089UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
1W – 28V – 2GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
4W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
1A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
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