TIP52 데이터 시트보기 (PDF) - Inchange Semiconductor

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TIP52

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

TIP52

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A

VBE(on) Base-Emitter On Voltage

IC= 3A; VCE= 10V

ICES

Collector Cutoff Current

VCE= 400V; VBE= 0

ICEO

Collector Cutoff Current

VCE= 200V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.3A; VCE= 10V

hFE-2

DC Current Gain

IC= 3A; VCE= 10V

fT

Current-Gain—Bandwidth Product

IC= 0.2A; VCE= 10V

MIN MAX UNIT

300

V

1.5

V

1.5

V

1.0

mA

1.0

mA

1.0

mA

30

150

10

2.5

MHz

isc Website：www.iscsemi.cn

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