TSMF1000(2000) 데이터 시트보기 (PDF) - Vishay Semiconductors
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TSMF1000 Datasheet PDF : 4 Pages
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TSMF1000
Vishay Telefunken
High Speed IR Emitting Diode in ø SMD Package
Description
TSMF1000 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology molded in clear SMD
package
In comparison with the standard GaAs on GaAs
technology these emitters achieve about 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
15 969
Features
D Extra high radiant power
D Low forward voltage
D Suitable for high pulse current operation
D Angle of half intensity ϕ = ± 17°
D Peak wavelength lp = 870 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
IrDA compatible
Free air transmission systems
For control and drive circuits
Photointerrupters
Punched tape readers
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
tp/T = 0.5, tp = 100 ms
tp = 100 ms
xt 5sec, 2 mm from case
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
5
V
100
mA
200
mA
1.0
A
mW
100
°C
–40...+85
°C
–40...+85
°C
260
°C
Document Number 81061
Rev. 4, 31-Mar-00
www.vishay.de • FaxBack +1-408-970-5600
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