TSMF1030(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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TSMF1030
(Rev.:2008)
(Rev.:2008)
Vishay Semiconductors
TSMF1030 Datasheet PDF : 9 Pages
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TSMF1000, TSMF1020, TSMF1030
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors
Compliant, 890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t≤5s
Thermal resistance junction/ambient
Soldered on PCB, pad dimensions:
4 mm x 4 mm
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
400
UNIT
°C
°C
°C
°C
K/W
200
180
160
140
120
100
80
RthJA = 400 K/W
60
40
20
0
0
21165
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
RthJA = 400 K/W
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21166
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
IF = 20 mA
IF = 1 A, tp = 100 µs
IF = 1 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
IF = 100 mA, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 20 mA
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Cut-off frequency
Virtual source diameter
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IDC = 70 mA, IAC = 30 mA pp
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
VF
TKVF
IR
Cj
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
fc
d
MIN.
2.5
TYP.
1.3
2.4
- 1.8
160
5
25
35
- 0.6
± 17
890
40
0.2
30
30
12
1.2
MAX.
1.5
10
13
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Document Number: 81061
Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
225
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