AD7822 데이터 시트보기 (PDF) - Analog Devices
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AD7822 Datasheet PDF : 20 Pages
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AD7822/AD7825/AD7829–SPECIFICATIONS(VDD = 3 V ؎ 10%, VDD = 5 V ؎ 10%, GND = 0 V,
VREF IN/OUT = 2.5 V. All specifications –40؇C to +85؇C unless otherwise noted.)
Parameter
Version B
Unit
Test Condition/Comment
DYNAMIC PERFORMANCE
Signal to (Noise + Distortion) Ratio1
Total Harmonic Distortion1
Peak Harmonic or Spurious Noise1
Intermodulation Distortion1
2nd Order Terms
3rd Order Terms
Channel-to-Channel Isolation1
DC ACCURACY
Resolution
Minimum Resolution for Which
No Missing Codes Are Guaranteed
Integral Nonlinearity (INL)1
Differential Nonlinearity (DNL)1
Gain Error1
Gain Error Match1
Offset Error1
Offset Error Match1
ANALOG INPUTS2
VDD = 5 V ± 10%
VIN1 to VIN8 Input Voltage
VMID Input Voltage
VDD = 3 V ± 10%
VIN1 to VIN8 Input Voltage
VMID Input Voltage
VIN Input Leakage Current
VIN Input Capacitance
VMID Input Impedance
REFERENCE INPUT
VREF IN/OUT Input Voltage Range
Input Current
ON-CHIP REFERENCE
Reference Error
Temperature Coefficient
LOGIC INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IIN
Input Capacitance, CIN
LOGIC OUTPUTS
Output High Voltage, VOH
Output Low Voltage, VOL
High Impedance Leakage Current
High Impedance Capacitance
48
–55
–55
–65
–65
–70
8
8
± 0.75
± 0.75
±2
± 0.1
±1
± 0.1
VDD
0
VDD – 1.25
1.25
VDD
0
VDD – 1
1
±1
15
6
2.55
2.45
1
100
± 50
50
2.4
0.8
2
0.4
±1
10
4
2.4
0.4
0.2
±1
10
dB min
dB max
dB max
dB typ
dB typ
dB typ
Bits
Bits
LSB max
LSB max
LSB max
LSB typ
LSB max
LSB typ
V max
V min
V max
V min
V max
V min
V max
V min
µA max
pF max
kΩ typ
V max
V min
µA typ
µA max
mV max
ppm/°C typ
V min
V max
V min
V max
µA max
pF max
V min
V min
V max
V max
µA max
pF max
fIN = 30 kHz. fSAMPLE = 2 MHz
fa = 27.3 kHz, fb = 28.3 kHz
fIN = 20 kHz
See Analog Input Section
Input Voltage Span = 2.5 V
Default VMID = 1.25 V
Input Voltage Span = 2 V
Default VMID = 1 V
2.5 V + 2%
2.5 V – 2%
Nominal 2.5 V
VDD = 5 V ± 10%
VDD = 5 V ± 10%
VDD = 3 V ± 10%
VDD = 3 V ± 10%
Typically 10 nA, VIN = 0 V to VDD
ISOURCE = 200 µA
VDD = 5 V ± 10%
VDD = 3 V ± 10%
ISINK = 200 µA
VDD = 5 V ± 10%
VDD = 3 V ± 10%
–2–
REV. B
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