BC393(1989) 데이터 시트보기 (PDF) - STMicroelectronics

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BC393
(Rev.:1989)

HIGH VOLTAGE AMPLIFIER

STMicroelectronics 

BC394

THERMAL DATA

Rt h j-c ase Thermal Resistance Junction-case

R th j-amb Thermal Resistance Junction-ambient

Max

125

Max

440

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ.

ICB O

Collector Cutoff Current

(IE = 0)

VCB = 100 V

VCB = 100 V T amb = 150 °C

V( BR) CBO Collector-base Breakdown

Voltage (IE = 0 )

IC = 100 µA

180

V(BR) CEO * Collector-emitter Breakdown

Voltage (IB = 0 )

IC = 10 mA

180

V( BR) EBO Emitter-base Breakdown

Voltage (IC = 0 )

IE = 100 µA

6

VCE (s at ) * Collector-emitter Saturation

Voltage

IC = 10 mA IB = 1 mA

200

IC = 50 mA IB = 5 mA

400

VBE ( sat) * Base-emitter Saturation

Voltage

IC = 10 mA IB = 1 mA

750

IC = 50 mA IB = 5 mA

850

h F E * DC Curent Gain

IC = 1 mA

IC = 10 mA

VCE = 10 V

VCE = 10 V

85

30

100

fT

Transition frequency

I C = 10 mA VCE = 10 V

50

95

C CBO

Collector-base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

5

* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

Max.

50

50

300

900

DC Current.

Collector-emitter Saturation Voltage.

Unit

nA

µA

V

V

V

mV

mV

mV

mV

MHz

pF

2/5

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