BC394 데이터 시트보기 (PDF) - STMicroelectronics

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BC394

EPITAXIAL PLANAR NPN

STMicroelectronics 

BC394

THERMAL DATA

Rthj-case Thermal Resistance Junction-Case

Rthj-amb Thermal Resistance Junction-Ambient

Max

Max

107.1

375

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 100 V

VCB = 100 V

TC = 150 oC

V(BR)CBO Collector-Base

Breakdown Voltage

(IE = 0)

V(BR)CEO∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

VCE(sat)∗ Collector-Emitter

Saturation Voltage

IC = 100 µA

IC = 10 mA

IE = 100 µA

IC = 10 mA

IC = 50 mA

IB = 1 mA

IB = 5 mA

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 10 mA

IC = 50 mA

IB = 1 mA

IB = 5 mA

hFE∗ DC Current Gain

IC = 1 mA

IC = 10 mA

VCE = 10 V

VCE = 10 V

CCBO

Collector-Base

Capacitance

IE = 0

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

VCB = 10 V f = 1 MHz

Min. Typ.

180

180

6

0.2

0.4

0.75

0.85

85

30 100

5

Max.

50

50

0.3

0.9

Unit

nA

µA

V

V

V

V

V

V

V

pF

2/5

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