TDA8571J 데이터 시트보기 (PDF) - NXP Semiconductors.
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TDA8571J Datasheet PDF : 21 Pages
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Philips Semiconductors
4 × 40 W BTL quad car radio power
amplifier
Product specification
TDA8571J
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Po
Po(EIAJ)
Po(max)
THD
Bp
fro(l)
fro(h)
Gv(cl)
SVRR
Zi
Vn(o)
αcs
∆Gv
Vo
PARAMETER
CONDITIONS
MIN.
output power
THD = 0.5%
16
THD = 10%
21
EIAJ output power
VP = 13.7 V; THD = 0.5%
−
VP = 13.7 V; THD = 10%
−
THD = maximum; Vi = 2 V (p-p) 35
square wave
maximum output power
total harmonic distortion
power bandwidth
THD = maximum; VP = 15.2 V; 40
Vi = 2 V (p-p) square wave
Po = 1 W
−
VMODE = 0.6 V; note 1
−
THD = 0.5%; Po = −1 dB with −
respect to 16 W
low frequency roll-off
at −1 dB; note 2
−
high frequency roll-off
at −1 dB
20
closed-loop voltage gain
33
supply voltage ripple rejection Rs = 0 Ω; maximum ripple
Vripple = 2 V (p-p)
on
40
mute
50
standby
80
input impedance
25
noise output voltage
B = 20 Hz to 20 kHz
channel separation
channel unbalance
on; Rs = 0 Ω
−
on; Rs = 10 kΩ
−
mute; independent of Rs
−
Po = 16 W; Rs = 10 kΩ
45
−
output signal in mute
maximum input voltage
−
Vi = 1 V (RMS)
TYP.
19
26
17.5
23
40
45
0.1
10
20 to
20 000
25
−
34
−
−
−
30
125
150
100
−
−
−
Notes
1. Dynamic Distortion Detector (DDD) active, pin VDIAG is set to LOW level.
2. Frequency response externally fixed.
MAX.
−
−
−
−
−
UNIT
W
W
W
W
W
−
W
−
%
−
%
−
Hz
−
Hz
−
kHz
35
dB
−
dB
−
dB
−
dB
38
kΩ
170 µV
−
µV
−
µV
−
dB
1
dB
2
mV
2002 Mar 05
9
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