BU808 데이터 시트보기 (PDF) - STMicroelectronics

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BU808

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

STMicroelectronics 

®

BU808DFI

HIGH VOLTAGE FAST-SWITCHING

NPN POWER DARLINGTON TRANSISTOR

s STMicroelectronics PREFERRED

SALESTYPE

s NPN MONOLITHIC DARLINGTON WITH

INTEGRATED FREE-WHEELING DIODE

s HIGH VOLTAGE CAPABILITY ( > 1400 V )

s HIGH DC CURRENT GAIN ( TYP. 150 )

s FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

s LOW BASE-DRIVE REQUIREMENTS

s DEDICATED APPLICATION NOTE AN1184

APPLICATIONS

s COST EFFECTIVE SOLUTION FOR

HORIZONTAL DEFLECTION IN LOW END

TV UP TO 21 INCHES.

DESCRIPTION

The BU808DFI is a NPN transistor in monolithic

Darlington configuration. It is manufactured using

Multiepitaxial Mesa technology for cost-effective

high performance.

3

2

1

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

VCBO

VCEO

VEBO

IC

ICM

IB

IBM

Ptot

Visol

Tstg

Tj

Parameter

Collector-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (tp < 5 ms)

Base Current

Base Peak Current (tp < 5 ms)

Total Dissipation at Tc = 25 oC

Insulation Withstand Voltage (RMS) from All

Three Leads to Exernal Heatsink

Storage Temperature

Max. Operating Junction Temperature

April 2002

Value

1400

700

5

8

10

3

6

52

2500

-65 to 150

150

Unit

V

V

V

A

A

A

A

W

V

oC

oC

1/7

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