2N720A 데이터 시트보기 (PDF) - STMicroelectronics
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2N720A Datasheet PDF : 4 Pages
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2N720A
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
83.3
300
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IEBO
Emitter Cut-off
Current (IE = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCB = 90 V
IC = 100 µA
IC = 30 mA
IE = 100 µA
VEB = 5 V
IC = 50 mA
IC = 150 mA
IB = 5 mA
IB = 15 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 50 mA
IC = 150 mA
IB = 5 mA
IB = 15 mA
hFE∗
hfe∗
DC Current Gain
Small Signal Current
Gain
IC = 100 µA
IC = 10 mA
IC = 150 mA
IC = 50 mA
f = 20 MHz
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
VEB = 0.5 V f = 1 MHz
Min. Typ.
120
80
7
20
35
40
2.5
Max.
10
10
1.2
5
0.9
1.3
120
15
85
Unit
nA
V
V
V
nA
V
V
V
V
pF
pF
2/4
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