MJE5852 데이터 시트보기 (PDF) - STMicroelectronics

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MJE5852

HIGH VOLTAGE PNP POWER TRANSISTOR

STMicroelectronics 

®

MJE5852

HIGH VOLTAGE PNP POWER TRANSISTOR

s STMicroelectronics PREFERRED

SALESTYPE

s PNP TRANSISTOR

s HIGH VOLTAGE CAPABILITY

APPLICATIONS:

s SWITCHING REGULATORS

s MOTOR CONTROL

s INVERTERS

DESCRIPTION

The MJE5852 is manufactured using High

Voltage PNP Multi-Epitaxial technology for high

switching speed and high voltage capability.

It is intended for use in high frequency and

efficiency converters, switching regulators and

motor control.

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

VCES

VCEO

VEBO

IC

ICM

IB

IBM

Ptot

Tstg

Tj

Parameter

Collector-Emitter Voltage (VBE = 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (tp < 5ms)

Base Current

Base Peak Current (tp < 5ms)

Total Dissipation at Tc ≤ 25 oC

Storage Temperature

Max. Operating Junction Temperature

September 2003

Value

-450

-400

-7

-8

-16

-4

-8

80

-65 to 150

150

Unit

V

V

V

A

A

A

A

W

oC

oC

1/4

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