STPS2H100(2010) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2H100 Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS2H100
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(AV) Average forward current
SMA / SMB TL = 130 °C δ = 0.5
SMB flat
TL = 150 °C δ = 0.5
IFSM Surge non repetitive forward current
tp =10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Operating junction temperature (1)
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
SMA
Rth(j-l) Junction to lead
SMB
SMB flat
Value
Unit
100
V
2
A
75
A
2400
W
-65 to + 175 °C
175
°C
Value
30
25
15
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C VR = VRRM
1
µA
0.4
1
mA
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 2 A
IF = 4 A
0.79
0.6
0.65
V
0.88
0.69 0.74
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.56 x IF(AV) + 0.045 IF2(RMS)
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Doc ID 6115 Rev 7
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