STPS2H100UF(2010) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2H100UF Datasheet PDF : 10 Pages
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Characteristics
STPS2H100
Figure 7.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
IM(A)
10
SMB
9
8
7
Ta=25°C
6
5
Ta=75°C
4
3
Ta=125°C
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
1.E+00
Figure 8.
IM(A)
30
25
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB flat)
SMB flat
20
15
10
IM
5
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TL=25°C
TL=75°C
TL=125°C
1.E+00
Figure 9.
Relative variation of thermal
Figure 10. Relative variation of thermal
impedance junction to ambient
impedance junction to lead
versus pulse duration (SMA / SMB)
versus pulse duration (SMB flat)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-02
1.E-01
SMA
SMB
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Zth(j-l)/Rth(j-l)
1.0
SMB flat
0.9
(non exposed pad)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
1.E+01
Figure 11. Reverse leakage current versus
reverse voltage applied
(typical values)
1.E+04 IR(µA)
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
20
40
60
80
100
Figure 12. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
1
VR(V)
10
100
4/10
Doc ID 6115 Rev 7
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