TIP47 데이터 시트보기 (PDF) - STMicroelectronics

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TIP47

SILICON NPN SWITCHING TRANSISTORS

STMicroelectronics 

TIP47 / TIP48 / TIP49 / TIP50

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Rthj-amb Thermal Resistance Junction-ambient

Max

Max

3.125

62.5

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICES

Collector Cut-off

Current (VBE = 0)

for TIP47

for TIP48

for TIP49

for TIP50

VCE = 350 V

VCE = 400 V

VCE = 450 V

VCE = 500 V

ICEO

Collector Cut-off

Current (IB = 0)

for TIP47

for TIP48

for TIP49

for TIP50

VCE = 150 V

VCE = 200 V

VCE = 250 V

VCE = 300 V

IEBO

Emitter Cut-off Current

(IC = 0)

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

VEB = 5 V

IC = 30 mA

for TIP47

for TIP48

for TIP49

for TIP50

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

VBE(on)* Base-Emitter Voltage IC = 1 A

VCE = 10 V

hFE* DC Current Gain

IC = 0.3 A

IC = 1 A

VCE = 10 V

VCE = 10 V

fT

Transition Frequency VCE = 10 V

f = 2 MHz

IC = 0.2 A

hfe

Small Signal Current VCE = 10 V

Gain

f = 1 KHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

IC = 0.2 A

Min. Typ.

250

300

350

400

30

10

10

25

Max.

1

1

1

1

1

1

1

1

1

1

1.5

150

Unit

mA

mA

mA

mA

mA

mA

mA

mA

mA

V

V

V

V

V

V

MHz

2/4

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