OM6215SS 데이터 시트보기 (PDF) - Unspecified

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OM6215SS

TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE

Unspecified 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6214SS (Per FET) (100 Volt)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IDSS

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

100

V VGS = 0,

ID = 250 mA

2.0

4.0 V VDS = VGS, ID = 250 mA

±100 nA VGS = ±20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

30

A VDS 2 VDS(on), VGS = 10 V

1.1 1.3 V VGS = 10 V, ID = 20 A

RDS(on) Static Drain-Source On-State

Resistance1

.055 .065

VGS = 10 V, ID = 20 A

RDS(on) Static Drain-Source On-State

Resistance1

.09 0.11

VGS = 10 V, ID = 20 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6215SS (Per FET) (200 Volt)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IDSS

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

200

V

2.0

4.0 V

±100 nA

0.1 0.25 mA

0.2 1.0 mA

25

A

1.36 1.52 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 m

VGS = ±20 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS 2 VDS(on), VGS = 10 V

VGS = 10 V, ID = 16 A

RDS(on) Static Drain-Source On-State

Resistance1

.085 .095

VGS = 10 V, ID = 16 A

RDS(on) Static Drain-Source On-State

Resistance1

0.14 0.17

VGS = 10 V, ID = 16 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

9.0 10

2700

1300

470

28

45

100

50

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 20 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 30 V, ID @ 20 A

ns Rg = 5.0 W , VG = 10V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

8.0 12.5

2400

600

250

25

60

85

38

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 16 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 75 V, ID @ 16 A

ns Rg = 5.0 W ,VGS = 10V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

- 30 A Modified MOSPOWER

D

(Body Diode)

ISM Source Current1

- 140 A

symbol showing

G

the integral P-N

(Body Diode)

Junction rectifier.

S

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

- 25 A Modified MOSPOWER

D

(Body Diode)

ISM Source Current1

- 100 A

symbol showing

G

the integral P-N

(Body Diode)

Junction rectifier.

S

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 2.5 V TC = 25 C, IS = -40 A, VGS = 0 VSD Diode Forward Voltage1

400

ns TJ = 150 C,IF = IS,

trr

Reverse Recovery Time

dlF/ds = 100 A/ms

-2

350

V TC = 25 C, IS = -30 A, VGS = 0

ns TJ = 150 C,IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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