HE8051(Old_V) 데이터 시트보기 (PDF) - Unisonic Technologies

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HE8051
(Rev.:Old_V)

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

SMALL SIGNAL NPN TRANSISTOR

DESCRIPTION

The UTC HE8051 is a low voltage high current small

signal NPN transistor, designed for Class B push-pull 2W

audio amplifier for portable radio and general purpose

applications.

FEATURES

*Collector current up to 1.5A

*Collector-Emitter voltage up to 25 V

*complimentary to UTC HE8551

1

TO-92

1:EMITTER 2:BASE 3:COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

VALUE

Collector-Base Voltage

VCBO

40

Collector-Emitter Voltage

VCEO

25

Emitter-Base Voltage

VEBO

6

Collector Dissipation(Ta=25°C)

Pc

1

Collector Current

Ic

1.5

Junction Temperature

Tj

150

Storage Temperature

TSTG

-65 ~ +150

UNIT

V

V

V

W

A

°C

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Collector-Base Breakdown Voltage

BVCBO

Ic=100µA,IE=0

40

Collector-Emitter Breakdown Voltage BVCEO

Ic=2mA,IB=0

25

Emitter-Base Breakdown Voltage

BVEBO

IE=100µA,Ic=0

6

Collector Cut-Off Current

ICBO

VCB=35V,IE=0

Emitter Cut-Off Current

IEBO

VEB=6V,Ic=0

DC Current Gain

hFE1

VCE=1V,Ic=5mA

45

hFE2

VCE=1V,Ic=100mA

85

hFE3

VCE=1V,Ic=800mA

40

Collector-Emitter Saturation Voltage VCE(sat)

Ic=800mA,IB=80mA

Base-Emitter Saturation Voltage

VBE(sat)

Ic=800mA,IB=80mA

Base-Emitter Saturation Voltage

VBE

VCE=1V,Ic=10mA

Current Gain Bandwidth Product

fT

VCE=10V,Ic=50mA

100

Output Capacitance

Cob

VCB=10V,IE=0

f=1MHz

TYP

135

160

110

9.0

MAX

100

100

500

0.5

1.2

1.0

UNIT

V

V

V

nA

nA

V

V

V

MHz

pF

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R201-046,A

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