IRF634S(2020) 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명

상세내역

제조사

IRF634S
(Rev.:2020)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

101

150 °C

100

25 °C

10-1

0.4

91035_07

VGS = 0 V

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

103

5

2

102

5

2

10

5

2

1

5

2

0.1

1

91035_08

Operation in this area limited

by RDS(on)

10 µs

100 µs

1 ms

TC = 25 °C

TJ = 150 °C

Single Pulse

10 ms

2

5 10 2

5 102 2

5 103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

10

IRF634S, SiHF634S

Vishay Siliconix

10

8

6

4

2

0

25

91035_09

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

1 0 − 0.5

0.2

0.1

0.1 0.05

0.02

0.01

10-2

10-5

91035_11

Single Pulse

(Thermal Response)

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

1

10

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S20-0682-Rev. D, 07-Sep-2020

4

Document Number: 91035

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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