IRF634S, SiHF634S
Vishay Siliconix
1750
1400
1050
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
700
Coss
350
Crss
0
100
91035_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
150 °C
100
25 °C
10-1
0.4
91035_07
VGS = 0 V
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 5.6 A
16
VDS = 200 V
VDS = 125 V
12
VDS = 50 V
8
4
0
0
91035_06
For test circuit
see figure 13
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
103
5
2
102
5
2
10
5
2
1
5
2
0.1
1
91035_08
Operation in this area limited
by RDS(on)
10 µs
100 µs
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
2
5 10 2
5 102 2
5 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91035
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000