PMBFJ309,215 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMBFJ309,215 Datasheet PDF : 15 Pages
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NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
104
IGSS
(pA)
103
mcd231
102
10
1
10−1
−25
25
75
125
175
Tj (°C)
Fig 16. Gate current as a function of junction temperature; typical values.
102
mcd228
102
gis, bis
(mS)
10
bis
gfs,−bfs
(mS)
gfs
10
1
−bfs
gis
mcd227
10−1
10
102
103
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 17. Input admittance; typical values.
1
10
102
103
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 18. Forward transfer admittance; typical values.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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