BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
FEATURES
◇ Silicon epitaxial planar diode
◇ High speed switching diode
◇ 500 mW power dissipation
MECHANICAL DATA
◇ Case: MINI-MELF,glass case
◇ Polarity: Color band denotes cathode
◇ Weight: Approx 0.031 grams
LL4150
VOLTAGE RANGE: 50 V
CURRENT: 300 m A
MINI-MELF
Cathode indification
3.4 +0.3
-0.1
0.4±0.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
VR
Peak reverse voltage
VRM
Average forward rectified current VR=0V
IO
Forward surge current at t=1µs
IFSM
Power dissipation
Ptot
Thermal resistance junction to ambient
Rthja
Junction temperature
Tj
Storage temperature range
TSTG
ELECTRICAL CHARACTERISTICS
Forward voltage at IF=1mA
IF=10mA
IF=50mA
VF
IF=100mA
IF=200mA
Leakage current @VR=50V,TJ=25℃
VR=50V,TJ=150℃
IR
Capacitance at VR=0V,f=1MHZ,VHF=50mV Ctot
Reverse recovery time
IF=IR=(10to100mA),iR=0.1×IR
trr
RL=100Ω
LL4150
50
50
300
4.0
500
350
175
-65 --- + 175
MIN.
0.54
0.66
0.76
0.82
0.87
-
-
-
-
MAX.
0.62
0.74
0.86
0.92
1.0
0.1
100
2.5
4.0
UNITS
V
V
mA
A
mW
K/W
℃
℃
UNITS
V
µA
pF
ns
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Document Number 0268024
BLGALAXY ELECTRICAL
1.