M29F512B 데이터 시트보기 (PDF) - STMicroelectronics
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M29F512B Datasheet PDF : 16 Pages
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M29F512B
512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8µs per Byte typical
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Chip Erase algorithm
– Status Register Polling and Toggle Bits
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 24h
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
PLCC32 (K)
16
A0-A15
W
E
G
M29F512B
8
DQ0-DQ7
VSS
AI02739
July 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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