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BAW56S

High-speed double diode array

Philips Electronics 

Philips Semiconductors

High-speed double diode array

Product specification

BAW56S

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 450 mA.

PINNING

PIN

1

2

3

4

5

6

cathode (k1)

cathode (k2)

common anode (a1)

cathode (k3)

cathode (k4)

common anode (a2)

DESCRIPTION

APPLICATIONS

• General purpose switching in e.g.

surface mounted circuits.

6 54

handbook, halfpage

654

DESCRIPTION

The BAW56S consists of two dual

high-speed switching diodes with

common anodes, fabricated in planar

technology, and encapsulated in the

small SMD SOT363 plastic package.

12

Top view

3

MSA370

1

2

3 MGL159

Marking code: A1t.

Fig.1 Simplified outline (SOT363) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VRRM

VR

IF

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

IFRM

repetitive peak forward current

IFSM

non-repetitive peak forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

single diode loaded; see Fig.2

all diodes loaded; see Fig.2

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Ts = 60 °C; note 1

Note

1. One or more diodes loaded.

MIN. MAX. UNIT

−

85

V

−

75

V

−

250

mA

−

100

mA

−

450

mA

−

4

A

−

1

A

−

0.5

A

−

350

mW

−65

+150 °C

−65

+150 °C

1997 Oct 21

2

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