29F200-120 데이터 시트보기 (PDF) - Alliance Semiconductor

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29F200-120

5V 256K x 8/128K x 8 CMOS FLASH EEPROM

Alliance Semiconductor 

$65<)533

'$7$#SROOLQJ#DOJRULWKP

Read byte (DQ0–DQ7)

Address = VA†

3UHOLPLQDU\#LQIRUPDWLRQ

®

7RJJOH#ELW#DOJRULWKP

Read byte (DQ0–DQ7)

Address = don’t care

DQ7

=

data

YES DONE

?

NO

DQ5

NO =

1

?

YES

Read byte (DQ0–DQ7)

Address = VA

DQ6

=

toggle

NO DONE

?

YES

DQ5

NO =

1

?

YES

Read byte (DQ0–DQ7)

Address = don’t care

DQ7

=

data‡

YES† DONE

?

NO†

FAIL

† VA = Byte address for programming. VA = any of the sector

addresses within the sector being erased during Sector Erase. VA

= valid address equals any non-protected sector group address

during Chip Erase.

‡ DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not

change simultaneously.

DQ6

tog=gle†

?

NO DONE

YES

FAIL

†DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling

when DQ5 changes to 1.

43

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