PBLS6004D 데이터 시트보기 (PDF) - NXP Semiconductors.

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PBLS6004D

60 V PNP BISS loadswitch

NXP Semiconductors. 

PBLS6004D

60 V PNP BISS loadswitch

Rev. 02 — 7 September 2009

Product data sheet

1. Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and

NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted

Device (SMD) plastic package.

1.2 Features

I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package

I Low threshold voltage (< 1 V) compared to MOSFET

I Low drive power required

I Space-saving solution

I Reduction of component count

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

TR1; PNP low VCEsat transistor

VCEO

collector-emitter voltage open base

IC

collector current (DC)

RCEsat

collector-emitter saturation IC = −1 A;

resistance

IB = −100 mA

TR2; NPN resistor-equipped transistor

VCEO

IO

R1

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

open base

R2/R1

bias resistor ratio

Min Typ

-

-

[1] -

-

[2] -

255

-

-

-

-

15.4 22

0.8

1

Max

−60

−1

340

50

100

28.6

1.2

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02

Unit

V

A

mΩ

V

mA

kΩ

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