PBLS6004D 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBLS6004D Datasheet PDF : 16 Pages
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NXP Semiconductors
PBLS6004D
60 V PNP BISS loadswitch
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1; PNP low VCEsat transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current (DC)
[1] -
[2] -
[3] -
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
IB
base current (DC)
-
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
[2] -
[3] -
TR2; NPN resistor-equipped transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
[2] -
[3] -
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
[2] -
[3] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Max Unit
−80
V
−60
V
−5
V
−700 mA
−850 mA
−1
A
−2
A
−300 mA
−1
A
250
mW
350
mW
400
mW
50
V
50
V
10
V
+40
V
−10
V
100
mA
100
mA
200
mW
200
mW
200
mW
400
mW
530
mW
600
mW
+150 °C
150
°C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS6004D_2
Product data sheet
Rev. 02 — 7 September 2009
© NXP B.V. 2009. All rights reserved.
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