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MSD-601RT1(2006) 데이터 시트보기 (PDF) - ON Semiconductor

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MSD-601RT1
(Rev.:2006)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MSD-601RT1 Datasheet PDF : 4 Pages
1 2 3 4
MSD601−RT1, MSD601−ST1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector − Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
Collector − Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601−RT1
MSD601−ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector − Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
Symbol
Min
Max
Unit
V(BR)CEO
50
Vdc
V(BR)CBO
60
Vdc
V(BR)EBO
70
Vdc
ICBO
0.1
mAdc
ICEO
100
nAdc
hFE1
hFE2
VCE(sat)
210
340
290
460
90
0.5
Vdc
ORDERING INFORMATION
Device
Package
Shipping
MSD−601RT1
SC−59
3000 Units / Reel
MSD−601RT1G
SC−59
(Pb−Free)
3000 Units / Reel
MSD−601ST1
SC−59
3000 Units / Reel
MSD−601ST1G
SC−59
(Pb−Free)
3000 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2

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