MSD-601RT1 데이터 시트보기 (PDF) - ON Semiconductor
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MSD-601RT1 Datasheet PDF : 3 Pages
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MSD601-RT1, MSD601-ST1
Preferred Device
NPN General Purpose
Amplifier Transistors
Surface Mount
Features
• Pb−Free Packages are Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector − Base Voltage
V(BR)CBO
60
Collector − Emitter Voltage
V(BR)CEO
50
Emitter − Base Voltage
V(BR)EBO
7.0
Collector Current − Continuous
IC
100
Collector Current − Peak
IC(P)
200
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 ~ +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
BASE
2
EMITTER
MARKING
DIAGRAM
SC−59
CASE 318D
Yx M G
G
x=
M=
G=
R for RT1
S for ST1
Date Code
Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 − Rev. 9
Publication Order Number:
MSD601−RT1/D
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