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MSD601-RT1 데이터 시트보기 (PDF) - Leshan Radio Company

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MSD601-RT1 Datasheet PDF : 1 Pages
1
LESHAN RADIO COMPANY, LTD.
NPN General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
MSD601–RT1
MSD601–ST1
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
60
50
7.0
100
Collector Current–Peak
I C(P)
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
TJ
150
T stg
–55 ~ +150
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0)
Collector-Base Cutoff Current (V CB = 45 Vdc, I E = 0)
Collector-Emitter Cutoff Current (V CE = 10 Vdc, I B = 0)
DC Current Gain (1)
(V CE = 10 Vdc, I C = 2.0 mAdc)
MSD601-RT1
MSD601-ST1
(V CE = 2.0 Vdc, I C = 100 mAdc)
Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
I CBO
I CEO
hFE1
hFE2
VCE(sat)
DEVICE MARKING
2
1
CASE 318D–03, STYLE1
SC–59
Min
Max
Unit
50
Vdc
60
Vdc
7.0
Vdc
0.1
µAdc
100
nAdc
210
340
290
460
90
0.5
Vdc
YRX
Marking Symbol
YSX
MSD601–RT1
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N6–1/1

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