BCR1AM-12 데이터 시트보기 (PDF) - Renesas Electronics

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BCR1AM-12

Triac Low Power Use

Renesas Electronics 

BCR1AM-12

Breakover Voltage vs.

Junction Temperature

160

Typical Example

140

120

100

80

60

40

20

0

–60 –40 –20 0 20 40 60 80 100120 140

Junction Temperature (°C)

Commutation Characteristics

101

7

Typical Example

Tj = 125°C

5

4

IT = 1A

3 τ = 500µs

2 VD = 200V

Minimum

100

Characteristics

Value

7

5

4

3

2

III Quadrant

I Quadrant

10–1

10–1 2 3 4 5 7 100 2 3 4 5 7 101

Rate of Decay of On-State

Commutating Current (A/ms)

Gate Trigger Characteristics Test Circuits

6Ω

6Ω

6V

A

V

330Ω

Test Procedure I

6Ω

6V

A

V

330Ω

Test Procedure II

6Ω

6V

A

V

330Ω

Test Procedure III

6V

A

V

330Ω

Test Procedure IV

Breakover Voltage vs.

Rate of Rise of Off-State Voltage

160

Typical Example

140

Tj = 125°C

120

100

I Quadrant

80

60

40

III Quadrant

20

0

100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

Rate of Rise of Off-State Voltage (V/µs)

Gate Trigger Current vs.

Gate Current Pulse Width

103

7

Typical Example

5

4

3

2

102

7

IFGT I

5

IFGT III

4

IRGT III

3 IRGT I

2

101

100 2 3 4 5 7 101 2 3 4 5 7 102

Gate Current Pulse Width (µs)

Rev.1.00, Aug.20.2004, page 5 of 6

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