4N32X1 데이터 시트보기 (PDF) - Unspecified
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4N32X1 Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V )
F
Reverse Voltage (V )
R
Reverse Current (I )
R
1.2
10
Output
Collector-emitter Breakdown (BV ) 55
CEO
Collector-base Breakdown (BV )
55
CBO
Emitter-collector Breakdown (BVECO) 6
Collector-emitter Dark Current (I )
CEO
Coupled
Current Transfer Ratio (CTR) (Note 2)
4N32-3 200
400
800
1.4 V
V
10 µA
V
V
V
100 nA
%
%
%
4N32-2 400
%
800
%
4N32-1 800
Collector-emitter Saturation Voltage -3
-2
-1
Input to Output Isolation Voltage V 5300
ISO
7500
Input-output Isolation Resistance R 5x1010
ISO
Output Rise Time tr
60
Output Fall Time tf
53
%
1.0 V
1.0 V
1.0 V
V
RMS
V
PK
Ω
300 µs
250 µs
I = 20mA
F
I
R
=
10µA
V = 10V
R
I = 1mA (note 2)
C
I
C
=
100µA
IE = 100µA
V = 10V
CE
0.25mA I , 1.0V V
F
CE
0.5mA I , 1.0V V
F
CE
1.0mA
I
F
,
1.0V
VCE.
0.5mA IF , 1.0V VCE
1.0mA I , 1.0V V
F
CE.
1.0mA
I
F
,
1.0V
VCE.
0.25mA
I
F
,
0.5mA
IC
0.5mA I , 2mA I
F
C
1.0mA I , 8mA I
F
C
(note 1)
(note 1)
V = 500V (note 1)
IO
VCE = 2V ,
I
C
=
10mA,
R=
L
100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
30/7/97
DB91023-AAS/A3
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