1SMB51CAT3G(2006) 데이터 시트보기 (PDF) - ON Semiconductor
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1SMB51CAT3G Datasheet PDF : 7 Pages
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1SMB10CAT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
Operating and Storage
Temperature Range
PPK
PD
RqJL
PD
RqJA
TJ, Tstg
600
3.0
40
25
0.55
4.4
226
−65 to +150
W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
I
IPP
IT
VC VBR VRWM IR
IR
IT
V
VRWM VBR VC
IPP
Bi−Directional TVS
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