GS72108ATP 데이터 시트보기 (PDF) - Unspecified

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GS72108ATP

256K x 8 2Mb Asynchronous SRAM

Unspecified 

Truth Table

CE

OE

WE

H

X

X

L

L

H

L

X

L

L

H

H

Note: X: “H” or “L”

DQ1 to DQ8

Not Selected

Read

Write

High Z

GS72108ATP/J

VDD Current

ISB1, ISB2

IDD

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

–0.5 to +4.6

V

Input Voltage

VIN

–0.5 to VDD +0.5

(≤ 4.6 V max.)

V

Output Voltage

VOUT

–0.5 to VDD +0.5

(≤ 4.6 V max.)

V

Allowable power dissipation

PD

0.7

W

Storage temperature

TSTG

–55 to 150

oC

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-

ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device

reliability.

Rev: 1.04a 10/2002

3/12

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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