BC856A 데이터 시트보기 (PDF) - NXP Semiconductors.
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BC856A Datasheet PDF : 14 Pages
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BC856; BC857; BC858
65 V, 100 mA PNP general-purpose transistors
400
hFE
(1)
300
200
(2)
(3)
100
aaa-028117
- 1200
VBE
(mV)
- 1000
mgt712
(1)
- 800
(2)
- 600
(3)
- 400
- 200
0
-10-1
-1
-10
-102
-103
IC (mA)
VCE = -5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 1. BC856A; BC857A: DC current gain as a
function of collector current; typical values
- 104
mgt713
VCEsat
(mV)
- 103
0
- 10- 2 - 10- 1
-1
- 10
- 102
- 103
IC (mA)
VCE = -5 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 2. BC856A; BC857A: Base-emitter voltage as a
function of collector current; typical values
- 1200
VBEsat
(mV)
- 1000
mgt714
(1)
- 800
(2)
(3)
- 600
- 102
(1)
(3) (2)
- 400
- 200
- 10
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
0
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
IC/IB = 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 3. BC856A; BC857A: Collector-emitter saturation Figure 4. BC856A; BC857A: Base-emitter saturation
voltage as a function of collector current; typical values voltage as a function of collector current; typical values
BC856_BC857_BC858
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 16 April 2018
© Nexperia B.V. 2018. All rights reserved.
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