MAC97A6,116 데이터 시트보기 (PDF) - NXP Semiconductors.

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MAC97A6,116

Logic level triac

NXP Semiconductors. 

NXP Semiconductors

MAC97A8; MAC97A6

Logic level triac

6. Characteristics

Table 6. Characteristics

Tj = 25 C unless otherwise specified

Symbol Parameter

Conditions

Min

Typ

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; Figure 8

T2+ G+



1

T2+ G



2

T2 G



2

T2 G+



4

IL

latching current

VD = 12 V; IGT = 0.1 A; Figure 9

T2+ G+



1

T2+ G



5

T2 G



1

T2 G+



2

IH

holding current

VD = 12 V; IGT = 0.1 A; Figure 10



1

VT

on-state voltage

IT = 0.85 A; Figure 11



1.4

VGT

gate trigger voltage

VD = 12 V; IT = 0.1 A; Figure 7



0.9

VD = VDRM; IT = 0.1 A; Tj = 110 C

0.1

0.7

ID

off-state leakage current VD = VDRM (max); Tj = 110 C



3

Dynamic characteristics

dVD/dt

critical rate of rise of

off-state voltage

VD = 67% of VDM(max);

Tcase = 110 C; exponential

waveform; gate open circuit;

Figure 12

30

45

dVcom/dt critical rate of rise of

VD = rated VDRM; Tcase = 50 C;



5

commutation voltage

ITM = 0.84 A;

commutating dI/dt = 0.3 A/ms

tgt

gate controlled turn-on

ITM = 1.0 A; VD = VDRM(max);

time

IG = 25 mA; dIG/dt = 5 A/s



2

Max

Unit

5

mA

5

mA

5

mA

7

mA

10

mA

10

mA

10

mA

10

mA

10

mA

1.9

V

2

V



V

100

A



V/s



V/s



s

MAC97A8_A6

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 14 September 2011

© NXP B.V. 2011. All rights reserved.

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