STGD18N40LZT4(2008_03) 데이터 시트보기 (PDF) - STMicroelectronics

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STGD18N40LZT4
(Rev.:2008_03)

EAS 180 mJ - 400 V - internally clamped IGBT

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STGD18N40LZ - STGB18N40LZ

(TCASE=25°C unless otherwise specified)

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Collector emitter

VCES(clamped) clamped voltage

(VGE = 0)

V(BR)ECS

Emitter collector

break-down voltage

(VGE = 0)

VGE(clamped)

Gate emitter

clamped voltage

IC = 2 mA, RG = 1 kΩ

TC = - 40 °C to 150 °C

IC = 75 mA

IG = ±2 mA

370 400 430 V

20 28

V

12

16 V

ICES

IGES

RGE

Collector cut-off

current

(VGE = 0)

Gate cut-off

current (VCE = 0)

Gate emitter

resistance

VCE = 15 V, TC = 150 °C

VCE = 200 V,TC = 150 °C

VGE = ±10 V

10 µA

100 µA

450 625 830 µA

12 16 22 KΩ

RG

VGE(th)

VGEP

Gate resistance

1.6

KΩ

Gate threshold

voltage

VCE = 12 V, IC = 1 mA,TC = -40 °C 1.4

V

VCE = 12 V, IC = 1 mA

1.2 1.6 2.3 V

VCE = 12 V, IC = 1 mA, TC =150 °C 0.7

V

Gate emitter plateau

voltage

VCE = 12 V, IC = 10 A

2.9

V

VCE(sat)

Collector emitter

saturation voltage

VGE = 4.5 V, IC = 10 A

VGE = 4.5 V, IC = 10 A,

TC = 150 °C

VGE = 3.8 V, IC = 6 A

1.35 1.7 V

1.30

V

1.30

V

4/18

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