GB18N40LZ 데이터 시트보기 (PDF) - STMicroelectronics
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GB18N40LZ Datasheet PDF : 19 Pages
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STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK
D²PAK
Unit
IPAK I²PAK, TO-220
VCES Collector-emitter voltage (vGE = 0)
VCES(clamped)
V
VECS
IC (1)
ICP (2)
Emitter collector voltage (VGE = 0)
Collector current (continuous) at TC = 100 °C
Pulsed collector current
20
V
25
30
A
40
A
VGE Gate-emitter voltage
VGE(clamped)
V
PTOT Total dissipation at TC = 25 °C
125
150
W
EAS Single pulse energy TC= 25 °C, L = 3 mH, VCC = 50 V
300
mJ
EAS Single pulse energy TC=150 °C, L = 3 mH, VCC = 50 V
180
mJ
Human body model, R= 1.5 kΩ, C = 100 pF
8
kV
ESD Machine model, R = 0, C = 100 pF
800
V
Charged device model
2
kV
Tstg Storage temperature
Tj Operating junction temperature
– 55 to 175
°C
1. Calculated according to the iterative formula
IC(TC)
=
--------------------------------------T----j-(--m----a---x---)---–-----T---C----------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Pulse width limited by max. junction temperature allowed
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
DPAK
IPAK
1.2
100
Value
D²PAK
I²PAK, TO-220
1
62.5
Unit
°C/W
°C/W
Doc ID 14322 Rev 5
3/19
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