DCR2560A75(2009) 데이터 시트보기 (PDF) - Dynex Semiconductor
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DCR2560A75 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
DCR2560A85
125
125
d.c.
d.c.
180
180
120
120
100
90
60
100
30
90
60
30
75
75
50
50
25
25
0
0 1000 2000 3000 4000 5000 6000
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
16
Double side cooled
14
Anode side cooled
Cathode side cooled
12
10
8
6
4
2
0
0.001 0.01
0.1
1
Time (s)
10
100
0
0 1000 2000 3000 4000 5000 6000
Mean on-state current, IT(AV) - (A)
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled Ri (°C/kW)
Ti (s)
Anode side cooled Ri (°C/kW)
Ti (s)
Cathode side cooled Ri (°C/kW)
Ti (s)
1
2
3
4
3.01541 1.048955 0.983519 0.983519
0.703874 1.904794 0.059 0.059
3.156003 4.092806 1.556555 1.623962
2.69023 13.79162 0.059 0.205916
7.077369 3.483481 1.745839 2.634274
6.648601 8.436484 1.762119 0.08069
i4
Z
th
[Ri
(1
exp(T
/
T
i
)]
i1
ÁRth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
Double side cooling
ÁZth (z)
° sine.
rect.
180 0.44
0.31
120 0.49
0.43
90 0.55
0.49
60 0.60
0.55
30 0.64
0.61
15 0.66
0.64
Anode Side Cooling
ÁZth (z)
° sine.
rect.
180 0.42
0.30
120 0.47
0.41
90 0.52
0.46
60 0.57
0.52
30 0.61
0.58
15 0.62
0.61
Cathode Sided Cooling
ÁZth (z)
° sine.
rect.
180 0.42 0.30
120 0.47 0.41
90 0.52 0.46
60 0.57 0.52
30 0.60 0.58
15 0.62 0.60
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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