DCR2560A70(2009) 데이터 시트보기 (PDF) - Dynex Semiconductor

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DCR2560A70
(Rev.:2009)

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DCR2560A85

35

Conditions:

30

Tcase = 125°C

VR =0

25

Pulse width = 10ms

20

15

10

5

0

1

10

100

Number of cycles

Fig.10 Multi-cycle surge current

100

80

ITSM

60

10

I2t

8

6

40

4

Conditions:

20 Tcase= 125°C

2

VR = 0

half-sine wave

0

0

1

10

100

Pulse width, tP - (ms)

Fig.11 Single-cycle surge current

41000

36000

QSmax = 7950.1*(di/dt)0.4626

31000

26000

21000

16000

11000

6000

QSmin = 5146.8*(di/dt)0.5188

Conditions :

Tj = 125OC, VRpeak ~ 5100V

VRM ~ 3400V

snubber as appropriate to control

reverse voltage

1000

0

5

10 15 20 25 30

Rate of decay of on-state current, di/dt - (A/us)

Fig.12 Stored charge

800

700

IRRmax = 63.604*(di/dt)0.7474

600

500

400

IRRmin = 51.42*(di/dt)0.7839

300

Conditions:

200

Tj = 125OC, VRpeak ~ 5100V

VRM ~ 3400V

100

snubber as appropriate to

control reverse volts

0

0

5

10

15

20

25

30

Rate of decay of on-state current, di/dt - (A/us)

Fig.13 Reverse recovery current

7/10

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