2N6661 데이터 시트보기 (PDF) - Vishay Siliconix
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2N6661 Datasheet PDF : 4 Pages
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2N6661/VN88AFD
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typa
Limits
2N6661
VN88AFD
Min Max Min Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 10 mA
125
90
80
VDS = VGS, ID = 1 mA
1.6 0.8
2
0.8
2.5
V
TJ = –55_C
1.8
TJ = 125_C
1.3
VDS = 0 V, VGS = "15 V
TJ = 125_C
"100
"500
"100
nA
"500
VDS = 90 V, VGS = 0 V
10
VDS = 80 V, VGS = 0 V
VDS = 0.8 x V(BR)DSS, VGS = 0 V
10
mA
1
TJ = 125_C
500
500
VDS = 15 V, VGS = 10 V
1.8 1.5
A
VDS = 10 V, VGS = 10 V
1.8
1.5
VGS = 5 V, ID = 0.3 A
3.8
5.3
5.6
VGS = 10 V, ID = 1 A
3.6
4
TJ = 125_Cd
6.7
9
4
W
8
VDS = 10 V, ID = 0.5 A
350 170
170
mS
IS = 0.86 A, VGS = 0 V
0.9
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Switchingc
Ciss
Coss
Crss
Cds
35
50
VDS = 24 V, VGS = 0 V
15
40
f = 1 MHz
2
10
30
40
50
40
pF
10
Turn-On Time
Turn-Off Time
tON
VDD = 25 V, RL = 23 W
6
10
15
ID ^ 1 A, VGEN = 10 V
ns
tOFF
RG = 25 W
8
10
15
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
VNDQ09
www.vishay.com
11-2
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
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