2N6661 데이터 시트보기 (PDF) - Vishay Siliconix
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2N6661 Datasheet PDF : 4 Pages
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2N6661/VN88AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VGS = 5 V
Capacitance
125
VGS = 0 V
f = 1 MHz
100
1
TJ = 150_C
75
0.1
0.01
0.5
125_C
25_C
–55_C
1.0
1.5
2.0
VGS – Gate-to-Source Voltage (V)
50
C iss
C oss
25
C rss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
15.0
I D = 1.0 A
12.5
10.0
7.5
5.0
2.5
Gate Charge
VDS = 45 V
72 V
Load Condition Effects on Switching
100
VDD = 25 V
RL = 23 W
VGS = 0 to 10 V
ID = 1.0 A
10
td(off)
tr
td(on)
tf
0
0
100
200
300
400
500
Qg – Total Gate Charge (pC)
1
0.1
1
2
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)
1.0
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.01
0.1
1.0
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 20_C/W
3. TJM – TC = PDMZthJC(t)
1K
10 K
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
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