TMPG06-16(1999) 데이터 시트보기 (PDF) - General Semiconductor
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TMPG06-16 Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS at (TA=25°C unless otherwise noted) TABLE 1 (Cont’d)
Device Type
Breakdown Voltage
V(BR)
(Volts) (NOTE 1)
MIN
MAX
Test
Current
at IT
(mA)
Stand-off
Voltage
VWM
(Volts)
Maximum
Reverse
Leakage
at VWM
ID (µA)
Maximum
Reverse
Leakage
at VwM
TJ=150°C
ID (µA)
Peak Pulse
Current
IPPM
(NOTE 2)
(Amps)
Maximum
Clamping
Voltage at lPPM
VC (Volts)
Maximum
Temperature
Coefficient
of
V(BR)
(% / °C)
TMPG06-22
19.8
24.2
1.0
17.8
1.0
5.0
12.5
31.9
0.092
TMPG06-22A
20.9
23.1
1.0
18.8
1.0
5.0
13.1
30.6
0.092
TMPG06-24
21.6
26.4
1.0
19.4
1.0
5.0
11.5
34.2
0.094
TMPG06-24A
22.8
25.2
1.0
20.5
1.0
5.0
12.0
33.2
0.094
TMPG06-27
24.3
29.7
1.0
21.8
1.0
5.0
10.2
39.1
0.096
TMPG06-27A
25.7
28.4
1.0
23.1
1.0
5.0
10.7
37.5
0.096
TMPG06-30
27.0
33.0
1.0
24.3
1.0
5.0
9.2
43.5
0.097
TMPG06-30A
28.5
31.5
1.0
25.6
1.0
5.0
9.7
41.4
0.097
TMPG06-33
29.7
36.3
1.0
26.8
1.0
5.0
8.4
47.7
0.098
TMPG06-33A
31.4
34.7
1.0
28.2
1.0
5.0
8.8
45.7
0.098
TMPG06-36
32.4
39.6
1.0
29.1
1.0
5.0
7.7
52.0
0.099
TMPG06-36A
34.2
37.8
1.0
30.8
1.0
5.0
8.0
49.9
0.099
TMPG06-39
35.1
42.9
1.0
31.6
1.0
5.0
7.1
56.4
0.100
TMPG06-39A
37.1
41.0
1.0
33.3
1.0
5.0
7.4
53.9
0.100
TMPG06-43
38.7
47.3
1.0
34.8
1.0
5.0
6.5
61.9
0.101
TMPG06-43A
40.9
45.2
1.0
36.8
1.0
5.0
6.7
59.3
0.101
NOTES:
(1) V(BR) measured after IT applied for 300µs, IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
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