2N5002 데이터 시트보기 (PDF) - Microsemi Corporation

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2N5002

NPN POWER SILICON TRANSISTOR

Microsemi Corporation 

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

TECHNICAL DATA SHEET

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/534

DEVICES

2N5002 2N5004

LEVELS

JAN

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCBO

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ TA = +25°C (1)

@ TC = +25°C (2)

Operating & Storage Junction Temperature Range

VEBO

IC

IC (3)

PT

TJ, Tstg

Thermal Resistance, Junction-to Case

RθJC

Thermal Resistance, Junction-to Ambient

RθJA

Note:

1) Derate linearly 11.4 mW/°C for TA > +25°C

2) Derate linearly 331 mW/°C for TC > +25°C

3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%

80

100

5.5

5.0

10

2.0

58

-65 to +200

3.0

88

V

V

V

A

W

°C

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100mAdc

Collector-Emitter Cutoff Current

VCE = 40Vdc, IB = 0

Collector-Emitter Cutoff Current

VCE = 60Vdc, VBE = 0Vdc

VCE = 100Vdc, VBE = 0Vdc

Emitter-Base Cutoff Current

VBE = 4.0Vdc, IC = 0

VBE = 5.5Vdc, IC = 0

Symbol

Min.

Max. Unit

V(BR)CEO

80

ICEO

Vdc

50

µAdc

ICES

1.0

µAdc

1.0

mAdc

IEBO

1.0

mAdc

1.0

TO-59

T4-LDS-0038 Rev. 2 (081508)

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