SLN-286-TR3 데이터 시트보기 (PDF) - Stanford Microdevices
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SLN-286-TR3 Datasheet PDF : 3 Pages
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Product Description
Stanford Microdevices’ SLN-286 is a high performance
gallium arsenide heterojunction bipolar transistor MMIC
housed in a low-cost surface mount plastic package. A
Darlington configuration is used for broadband performance
from DC-3.5 GHz.
SLN-286
DC-3.5 GHz, 3Volt
50 Ohm LNA MMIC Amplifier
The SLN-286 needs only 2 DC-Blocking capacitors and a
bias resistor for operation. Noise figure may be optimized by
using 2-element matching at the input to yield <2.0 dB noise
figure.
This 50 Ohm LNA requires only a single supply voltage and
draws only 5mA. For broadband applications, it may be
biased at 4mA with minimal effect on noise figure and gain.
The SLN-286 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Noise Figure vs. Frequency
2.5
2
dB
1.5
4 mA
5 mA
1
0.1 0.5
1
1.5
2
2.5
3
3.5
GHz
Product Features
• Patented, Reliable GaAs HBT Technology
• Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz
• High Associated Gain: 27 dB Typ. at 2.0 GHz
• True 50 Ohm MMIC : No External Matching
Required
• Low Current Draw : Only 5 mA at 3V
• Low Cost Surface Mount Plastic Package
Applications
• AMPS, PCS, DECT, Handsets
• Tri-Band & Broadband Receivers
Electrical Specifications at Ta = 25C
S y m b o l P a ra m e te rs : Te s t C o n d itio n s
U n its
M in .
Ty p .
M ax.
NF
N o is e F ig u re in 5 0 O h m s :
5 0 O h m V d s = 3 .0 V, Id s = 5 m A
f = D C -1 .5 G H z
dB
f = 1 .5 -3 .5 G H z
dB
1 .7
2 .1
2 .2
5 0 O h m G ain:
S 21
V d s = 3 .0 V, Id s = 5 m A
f = D C -1 .5 G H z
f = 1 .5 -3 .5 G H z
dB
22
25
23
VSW R
5 0 O h m M a tc h (In p u t a n d O u tp u t):
f = D C -1 .5 G H z
-
V d s = 3 .0 V, Id s = 5 m A
f = 1 .5 -3 .5 G H z
1 .8 :1
2 .5 :1
NF
N o is e F ig u re in 5 0 O h m s :
5 0 O h m V d s = 2 .8 V, Id s = 4 m A
f = D C -1 .5 G H z
dB
f = 1 .5 -3 .5 G H z
dB
1 .9
2 .3
2 .4
5 0 O h m G ain:
S
21
V d s = 2 .8 V, Id s = 4 m A
f = D C -1 .5 G H z
f = 1 .5 -3 .5 G H z
dB
19
22
20
VSW R
5 0 O h m M a tc h (In p u t a n d O u tp u t):
V d s = 2 .8 V, Id s = 4 m A
f = D C -1 .5 G H z
f = 1 .5 -3 .5 G H z
-
1 .4 :1
2 .0 :1
O u tp u t P o w e r a t 1 d B C o m p re s s io n: V d = 3 .0 V, Id = 5 m A
dBm
-1 2
P 1dB
f = D C -3 .5 G H z
V d = 2 .8 V, Id = 4 m A
dBm
-1 4
T h ird O rd e r In te rc e p t P o in t:
IP 3
f = D C -3 .5 G H z
V d = 3 .0 V, Id = 5 m A
V d = 2 .8 V, Id = 4 m A
dBm
+3
+1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
4-21
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