CMFD2004I(2018) 데이터 시트보기 (PDF) - Central Semiconductor Corp

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CMFD2004I
(Rev.:2018)

SURFACE MOUNT SILICON DUAL ISOLATED HIGH VOLTAGE SWITCHING DIODES

Central Semiconductor Corp 

CMFD2004i

SURFACE MOUNT SILICON

DUAL ISOLATED HIGH VOLTAGE

SWITCHING DIODES

SOT-143 CASE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMFD2004i

consists of two electrically Isolated high voltage

switching diodes packaged in an epoxy molded

SOT-143 surface mount case. This device is

designed for switching applications requiring dual

high voltage diodes.

MARKING CODE: CJP

MAXIMUM RATINGS: (TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Peak Repetitive Reverse Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VR

VRRM

IO

IF

IFRM

IFSM

IFSM

PD

TJ, Tstg

ΘJA

240

300

200

225

450

4.0

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

MAX

IR

VR=240V

100

IR

VR=240V, TA=150°C

100

BVR

IR=100μA

300

VF

IF=100mA

1.0

CJ

VR=0, f=1.0MHz

5.0

trr

IF=IR=30mA, Irr=3.0mA, RL=100Ω

50

UNITS

V

V

mA

mA

mA

A

A

mW

°C

°C/W

UNITS

nA

μA

V

V

pF

ns

R6 (19-September 2018)

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