SF16GZ51 데이터 시트보기 (PDF) - Toshiba
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SF16GZ51 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
Critical Rate of Rise of Off−State Voltage
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
IH
dv / dt
Rth (j−c)
VDRM = VRRM = Rated
ITM = 50A
VD = 6V, RL = 10Ω
VD = 6V, ITM = 500mA
VDRM = Rated, Tc = 125°C
Exponential Rise
Junction to Case
SF16GZ51,SF16JZ51
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
V
―
―
1.5
V
―
―
15
mA
―
―
50
mA
―
50
― V / µs
―
―
1.5 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SF16GZ51
SF16JZ51
MARK
F16GZ51
F16JZ51
Example
*2
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-13
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