STP10N60M2 데이터 시트보기 (PDF) - STMicroelectronics

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STP10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages

STMicroelectronics 

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VGS

ID

ID

(1)

IDM

PTOT

(1)

dv/dt

(2)

dv/dt

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tstg Storage temperature

Tj

Max. operating junction temperature

1. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V

2. VDS ≤ 480 V

± 25

7.5

4.9

30

85

15

50

- 55 to 150

Unit

V

A

A

A

W

V/ns

°C

Symbol

Table 3. Thermal data

Parameter

Value

Unit

D2PAK DPAK TO-220 IPAK

Rthj-case Thermal resistance junction-case max

(1)

Rthj-pcb Thermal resistance junction-pcb max

30

Rthj-amb Thermal resistance junction-ambient max

1. When mounted on 1 inch² FR-4, 2 Oz copper board

1.47

50

62.5

°C/W

°C/W

100 °C/W

Symbol

Table 4. Avalanche characteristics

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive

IAR (pulse width limited by Tjmax )

2.5

A

Single pulse avalanche energy (starting

EAS Tj=25°C, ID= IAR; VDD=50)

110

mJ

DocID024710 Rev 2

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