STP10N60M2 데이터 시트보기 (PDF) - STMicroelectronics

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STP10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages

STMicroelectronics 

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

3

Test circuits

Test circuits

Figure 16. Switching times test circuit for

resistive load

Figure 17. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

μF

D.U.T.

3.3

μF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

μF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 18. Test circuit for inductive load

switching and diode recovery times

Figure 19. Unclamped inductive load test circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100μH

B

3.3

B

μF

D

G

RG

S

1000

μF

VDD

Vi

L

VD

2200

3.3

μF

μF

VDD

ID

D.U.T.

AM01470v1

Figure 20. Unclamped inductive waveform

9%5'66

9'

Pw

AM01471v1

Figure 21. Switching time waveform

ton

tdon

tr

toff

tdoff tf

9''

,'0

,'

0

9''

90%

10% VDS

90%

VGS

90%

10%

$0Y

0

10%

AM01473v1

DocID024710 Rev 2

9/24

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