FGP10N60UNDF(2012) 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

FGP10N60UNDF
(Rev.:2012)

600V, 10A Short Circuit Rated IGBT

Fairchild Semiconductor 

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Qg

Total Gate Charge

Qge

Gate to Emitter Charge

Qgc

Gate to Collector Charge

VCE = 400V, IC = 10A,

VGE = 15V

Min.

-

-

-

Typ.

37

5

21

Max

Units

nC

nC

nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 10A

TC = 25oC

TC = 125oC

trr

Qrr

Diode Reverse Recovery Time

IF = 10A, dIF/dt = 200A/µs

Diode Reverse Recovery Charge

TC = 25oC

TC = 125oC

TC = 25oC

TC = 125oC

Min.

-

-

-

-

-

-

Typ.

1.8

1.7

37.7

78.9

75

221

Max Units

2.2

V

ns

nC

FGP10N60UNDF Rev.A

3

www.fairchildsemi.com

Share Link: